Semiconductor diode with external field modulation

Details Semiconductor diode with external field modulation Semiconductor diode with external field modulation

1994-05-19

2000-01-11

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

257767, 257774, 257295, 257 66, H01L 2340, H01L 2352, H01L 2940

Patent

active

060139501

ABSTRACT:
A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

REFERENCES:
patent: 2791758 (1957-05-01), Looney
patent: 2791759 (1957-05-01), Brown
patent: 2791761 (1957-05-01), Morton
patent: 3651384 (1972-03-01), Waters et al.
patent: 3875567 (1975-04-01), Yamazaki
patent: 4920513 (1990-04-01), Takeshita et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5162880 (1992-11-01), Hazama
patent: 5198994 (1993-03-01), Natori
patent: 5229309 (1993-07-01), Kato
patent: 5307305 (1994-04-01), Takasu
"Vertical Diode-Capacitor Memory Cells", IBM Technical Disclosure Bulletin, Chang et al. vol. 15 No. 9 Feb. 1973. pp. 2887-2889.
"Physics of Semiconductor Devices" Bell Laboratories Incorporated. S. M. Sze, p. 64.

Affiliated with

Also associated with

Rating

Semiconductor diode with external field modulation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor diode with external field modulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diode with external field modulation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1464481