Semiconductor die with high density offset-inline bond...

Details Semiconductor die with high density offset-inline bond... Semiconductor die with high density offset-inline bond...

2006-06-20

2006-06-20

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S048000, C257S692000, C257S773000, C257S775000, C257S780000

Reexamination Certificate

active

07064450

ABSTRACT:
A pad pattern of a die includes first and second sets of elongated pads. The first set of elongated pads is interleaved with the second set of elongated pads. Each of the elongated pads has a bond pad area and a probe pad. Each bond pad area has a first constant width along a substantial portion thereof. Similarly, each probe pad area has a second constant width along a substantial portion thereof. The first constant width is greater than the second constant width. Each elongated pad in the first set has a first orientation. Similarly, each elongated pad in the second set has a second orientation, opposite the first orientation.

REFERENCES:
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patent: 6713881 (2004-03-01), Umehara et al.
U.S. Appl. No. 10/842,770, filed May 11, 2004, Mardi et al.

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