Semiconductor die edge reconditioning

Details Semiconductor die edge reconditioning Semiconductor die edge reconditioning

2005-04-20

2008-05-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S114000

Reexamination Certificate

active

07374971

ABSTRACT:
An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.

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