Semiconductor die containing lateral edge shapes and textures

Details Semiconductor die containing lateral edge shapes and textures Semiconductor die containing lateral edge shapes and textures

2009-09-17

2011-12-06

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S620000, C257S623000, C257SE33006

Reexamination Certificate

active

08072044

ABSTRACT:
Methods for singulating a semiconductor wafer into a plurality of individual dies that contain lateral edges or sidewalls and the semiconductor dies formed from these methods are described. The dies are formed from methods that use a front to back photolithography alignment process to form a photo-resist mask and an anisoptropic wet etch in an HNA and/or a TMAH solution on the backside of the wafer through the photoresist mask to form sloped sidewalls and/or textures. The conditions of the TMAH etching process can be controlled to form any desired combination of rough or smooth sidewalls. Thus, the dies formed have a Si front side with an area larger than the Si backside area and sidewalls or lateral edges that are not perpendicular to the front or back surface of the die. Other embodiments are also described.

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