Semiconductor devices including stress inducing layers

Details Semiconductor devices including stress inducing layers Semiconductor devices including stress inducing layers

2007-09-18

2007-09-18

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S368000, C257SE29113

Reexamination Certificate

active

11190254

ABSTRACT:
A semiconductor device may include a substrate and a fin shaped semiconductor region on the substrate. The fin shaped semiconductor region may include a channel region and first and second junction regions on opposite sides of the channel region. A gate electrode may be provided on the channel region of the fin shaped semiconductor region, and a stress inducing layer on the fin shaped semiconductor region.

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Korean Office Action for Korean Patent Application No. 10-2004-0058785 mailed on Feb. 28, 2006.

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