Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-09-02
2008-09-02
Landau, Matthew C. (Department: 2815)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S172000, C438S180000, C438S299000, C438S301000, C438S514000, C438S518000, C257S183000
Reexamination Certificate
active
11302062
ABSTRACT:
Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, and annealing the semiconductor layer and the protective layer to activate the implanted ions. An opening is formed in the protective layer to expose the implanted region of the semiconductor layer, and an electrode is formed in the opening. A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.
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Saxler Adam
Sheppard Scott T.
Cree Inc.
Kim Jay C
Landau Matthew C.
Myers Bigel & Sibley & Sajovec
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