Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-19
2008-12-09
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S396000, C257S397000, C257S506000, C257S524000, C257SE29020
Reexamination Certificate
active
07462916
ABSTRACT:
A FET structure is provided in which at least one stressor element provided at or near one corner of an active semiconductor region applies a stress in a first direction to one side of a channel region of the FET to apply a torsional stress to the channel region of the FET. In a particular embodiment, a second stressor element is provided at or near an opposite corner of the active semiconductor region to apply a stress in a second direction to an opposite side of a channel region of the FET, the second direction being opposite to the first direction. In this way, the first and second stressor elements cooperate together in applying a torsional stress to the channel region of the FET.
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U.S. Appl. No. 11/163,686, filed Oct. 27, 2005 entitled “Transistor Having Dielectric Stressor Elements for Applying In-Plane Shear Stress”.
Chidambarrao Dureseti
Ellis-Monaghan John J.
Narasimha Shreesh
Nowak Edward J.
Pekarik John J.
International Business Machines - Corporation
Neff Daryl K.
Schnurmann H. Daniel
Warren Matthew E
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