Semiconductor devices having storage nodes

Details Semiconductor devices having storage nodes Semiconductor devices having storage nodes

2006-11-21

2006-11-21

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000

Reexamination Certificate

active

07138675

ABSTRACT:
A semiconductor device is manufactured by forming a first insulating layer on a semiconductor substrate. First contact pads and second contact pads are formed that penetrate through the first insulating layer and are electrically connected to the semiconductor substrate. A second insulating layer is formed that has guide contact holes that expose upper surfaces of the first contact pads. An etch stopper is formed on bottoms and sidewalls of the guide contact holes of the second insulating layer. Bit lines are formed that are electrically connected to the semiconductor substrate by the second contact pads. The bit lines are electrically isolated from the first contact pads.

REFERENCES:
patent: 6586794 (2003-07-01), Nakamura et al.
patent: 6649508 (2003-11-01), Park et al.
patent: 2001-57666 (2001-07-01), None
patent: 2002-34468 (2002-05-01), None
Notice to Submit Response, Korean Application No. 10-2002-0063025, Sep. 23, 2004.

Affiliated with

Also associated with

Rating

Semiconductor devices having storage nodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices having storage nodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices having storage nodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3673141