Semiconductor devices having recesses filled with...

Details Semiconductor devices having recesses filled with... Semiconductor devices having recesses filled with...

2007-05-21

2010-06-15

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE21090, C257SE21409, C257SE29246, C438S300000, C438S504000

Reexamination Certificate

active

07737468

ABSTRACT:
Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material.

REFERENCES:
patent: 7554110 (2009-06-01), Yu et al.
patent: 2005/0285187 (2005-12-01), Bryant et al.
patent: 2006/0145273 (2006-07-01), Curello et al.
patent: 2007/0202641 (2007-08-01), Wei et al.
patent: 2008/0203427 (2008-08-01), Mowry et al.

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