Semiconductor devices having an improved gate

Details Semiconductor devices having an improved gate Semiconductor devices having an improved gate

1991-07-08

1993-10-19

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, H01L 2978, H01L 2906

Patent

active

052548678

ABSTRACT:
A MOSFET comprises a silicon substrate 1 having a source/drain region 7b formed in a surface region thereof, an insulating film 3 formed of silicon oxide, and a gate electrode 4a. The side surface region of the electrode 4a is covered with an insulating film 6 formed of silicon nitride. The insulating film 6 has an extended portion interposed between the electrode 4a and the insulating film 3 in a manner to surround the lower corner portion 4b of the electrode. Since the insulating film 6 has a dielectric constant larger than that of the insulating film 3, it is possible to suppress the electric field intensity at the lower corner portion 4b of the electrode.

REFERENCES:
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"Technical Digest of International Electron Devices Meeting; p. 234, Si.sub.3 N.sub.4 /SiO.sub.2 Spacer Induced High Reliability in LDDMOSFET and Its Simple Degradation Model"; T. Mizuno et al; 1988.

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