Semiconductor devices having a planarized insulating layer...

Details Semiconductor devices having a planarized insulating layer... Semiconductor devices having a planarized insulating layer...

2005-07-19

2009-11-24

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S258000, C438S396000, C438S597000, C438S623000, C257SE21647, C257SE21648, C257SE21664, C257SE23147, C257SE27004

Reexamination Certificate

active

07622307

ABSTRACT:
A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer are sequentially stacked to surround sidewalls of the at least one phase-change pattern. An interconnection layer pattern is disposed on the planarized capping layer, the planarized protecting layer, and the planarized insulating layer. The interconnection layer pattern is in contact with the phase-change pattern.

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Korean Office Action for Korean application No. 10-2004-0056127; dated Mar. 16, 2006.

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