Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-11-15
2010-12-07
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE29111, C257S288000, C257S330000, C257SE29126, C257SE29128, C257SE29132, C257SE29133, C257SE29134, C257SE29137, C257SE29150, C438S589000
Reexamination Certificate
active
07847367
ABSTRACT:
An integrated circuit device includes an integrated circuit substrate and a first gate pattern on the substrate. A non-conductive barrier layer pattern is on the first gate pattern. The barrier layer pattern has openings at selected locations therein extending to the first gate pattern. A second gate pattern is on the barrier layer pattern and extends into the opening in the barrier layer pattern to electrically connect the second gate pattern to the first gate pattern.
REFERENCES:
patent: 6930363 (2005-08-01), Jeng et al.
patent: 7195966 (2007-03-01), Park et al.
patent: 2007/0063257 (2007-03-01), Hur et al.
patent: 1020000061287 (2000-10-01), None
patent: 1020040001868 (2004-01-01), None
patent: 1020050052027 (2005-06-01), None
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Spalla David
Warren Matthew E
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