Semiconductor devices containing protons and deuterons implanted

Details Semiconductor devices containing protons and deuterons implanted Semiconductor devices containing protons and deuterons implanted

1979-02-13

1981-09-22

Roy, Upendra

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

148 15, 357 91, H01L 21265

Patent

active

042908256

ABSTRACT:
A process for manufacturing gallium arsenide devices in which regions of high resistivity are created in the gallium arsenide by subjecting the regions to bombardment by protons and then by deuterons, and devices so made.

REFERENCES:
patent: 3805376 (1974-04-01), D'Asaro et al.
Foyt et al. Solid St. Electronics, 12 (1969) 209.
Sattler et al. Phys. Rev. 161 (1967) 244.
Upadhyayula et al. Electronic Lelts., 11 (1975) 201.
Ohmura et al. Phys. Stat. Solidi, 15a (1973) 93.

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