Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-09-13
2005-09-13
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S638000, C257S642000, C438S629000, C438S725000
Reexamination Certificate
active
06943451
ABSTRACT:
Novel semiconductor devices containing a discontinuous cap layer and possessing a relatively low dielectric constant are provide herein. The novel semiconductor devices includes at least a substrate, a first dielectric layer applied on at least a portion of the substrate, a first set of openings formed through the dielectric layer to expose the surface of the substrate so that a conductive material deposited within and filling the openings provides a first set of electrical contact conductive elements and a discontinuous layer of cap material covering at least the top of the conductive elements to provide a first set of discontinuous cap elements. Methods for forming the semiconductor devices are also provided.
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Merriam-Webster's Collegiate Dictionary 10thEdition, 2001, pp. 250 and 330.
Gates Stephen McConnell
McGlashan-Powell Maurice
Nitta Satyanarayana V.
Petrarca Kevin S.
Purushothaman Sampath
Flynn Nathan J.
International Business Machines - Corporation
Mandala Jr. Victor A.
Morris Daniel P.
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