Semiconductor devices and their fabrication

Details Semiconductor devices and their fabrication Semiconductor devices and their fabrication

1985-05-01

1987-05-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29569L, 156649, 156651, 156653, 156657, 1566591, 156662, 357 17, 357 56, 372 43, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046629882

ABSTRACT:
A method of selectively etching one semiconductor material layer (4) of a multilayer structure which underlies another layer, a top layer (1), of the same or a similar semiconductor material without significantly affecting the top layer (1). The method involves pre-etching both layers (1,4) to provide a stepped structure with recesses (10) under an intermediate layer (5), providing r.f. deposited silicon dioxide (11) over the etched structure such that it is thinnest in the recesses (10) from which it is subsequently selectively removed and etching the layer (4) to the required extent while the top layer (1) is still covered by r.f. silicon dioxide. The method may be used in the manufacture of mass transport buried heterostructure lasers with the layers 1 and 4 of GaInAsP and layers 3 and 5 of InP, the recesses (10) subsequently being filled with InP by a mass transport process. Top layer (1) and intermediate layer (5) may be p-type and layer 3 n-type, top layer ( 1) providing an electrical contacting layer for the laser.

REFERENCES:
patent: 4049488 (1977-09-01), Tijburg
patent: 4468850 (1984-09-01), Liau et al.
patent: 4496403 (1985-01-01), Turley
Applied Physics Letter, vol. 41, No. 7, Apr. 1982, pp. 568-570, New York, U.S.; Zl. Liau et al, "A Novel Technique for GaInAsP/InP Buried Heterostructure Laser Fabrication".

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