Semiconductor devices and methods of manufacturing the same

Details Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same

2005-12-27

2009-12-29

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S708000

Reexamination Certificate

active

07638426

ABSTRACT:
Shorting of a copper line with an adjacent line in a semiconductor device during chemical mechanical polishing may be prevented and thus reliability of the semiconductor device may be improved, when the semiconductor device includes a substrate, an interlayer insulating layer formed on the substrate and having a dual trench, and a copper line formed to fill the dual trench, wherein the dual trench includes a first trench inclined at a first angle with respect to the substrate, and a second trench connected to the first trench and inclined at a second angle that is smaller than the first angle with respect to the substrate.

REFERENCES:
patent: 6261947 (2001-07-01), McTeer
patent: 6740599 (2004-05-01), Yamazaki et al.
patent: 7241684 (2007-07-01), Cho
patent: 1998-026825 (1998-07-01), None
(Method of Forming a Contact Hole in a Semiconductor Device); Patent Abstract of Korea; Publication No. 1993-026825; Publication Date: Jul. 15, 1998.

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