Semiconductor devices and methods of manufacturing the same

Details Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same

2007-09-11

2007-09-11

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S389000, C257S406000, C257S408000, C257S336000, C257SE21626, C257SE21640

Reexamination Certificate

active

11112533

ABSTRACT:
Semiconductor devices and methods of manufacturing semiconductor devices which achieve higher integration and higher operating speed are provided. A disclosed example semiconductor device includes a semiconductor substrate of a first conductivity type; a gate insulating layer on the substrate; and a gate on the gate insulating layer. The substrate also includes first spacers on opposite side walls of the gate. Each of the first spacers has a notch at a lower end adjacent the substrate. The example device also includes second spacers on side walls of respective ones of the first spacers; source/drain junction regions of a second conductivity type in the substrate on opposite sides of the gate and the second spacers; and LDD regions of the second conductivity type in the substrate at opposite sides of the gate and the first spacers. Each of the LDD regions has an end adjacent a respective one of the junction regions. The disclosed example device also includes pocket regions of the first conductivity type in the substrate at opposite sides of the gate. Each of the pocket regions has an end adjacent a respective one of the LDD regions, and each of the pocket regions has more depth under the gate than in other regions.

REFERENCES:
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 6642581 (2003-11-01), Matsuda et al.
patent: 6924529 (2005-08-01), Kim et al.
patent: 7071067 (2006-07-01), Ahmad
patent: 2003/0216021 (2003-11-01), Kim et al.

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