Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-06
2007-11-06
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21414
Reexamination Certificate
active
10975873
ABSTRACT:
In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.
REFERENCES:
patent: 4602192 (1986-07-01), Nomura
patent: 4943838 (1990-07-01), Ukai
patent: 4994401 (1991-02-01), Ukai
patent: 5574291 (1996-11-01), Dodabalapur et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5946551 (1999-08-01), Dimitrakopoulos et al.
patent: 6156583 (2000-12-01), Hwang
patent: 6274412 (2001-08-01), Kydd et al.
patent: 6284562 (2001-09-01), Batlogg et al.
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 6300659 (2001-10-01), Zhang et al.
patent: 6344660 (2002-02-01), Dimitrakopoulos et al.
patent: 6344662 (2002-02-01), Dimitrakopoulos et al.
patent: 6355299 (2002-03-01), Forbes et al.
patent: 6396105 (2002-05-01), Yamazaki et al.
patent: 6414164 (2002-07-01), Afzali-Ardakani et al.
patent: 6498114 (2002-12-01), Amundson et al.
patent: 6506438 (2003-01-01), Duthaler et al.
patent: 6555411 (2003-04-01), Bao et al.
patent: 6566714 (2003-05-01), Deane et al.
patent: 6596569 (2003-07-01), Bao et al.
patent: 6605494 (2003-08-01), Park et al.
patent: 6621098 (2003-09-01), Jackson et al.
patent: 6667188 (2003-12-01), Tanabe
patent: 6693044 (2004-02-01), Yamazaki et al.
patent: 6713330 (2004-03-01), Zhang et al.
patent: 6723394 (2004-04-01), Sirringhaus et al.
patent: 6736985 (2004-05-01), Bao et al.
patent: 6740547 (2004-05-01), Zhang
patent: 6747288 (2004-06-01), Yamazaki et al.
patent: 6773969 (2004-08-01), Lee et al.
patent: 2002/0004260 (2002-01-01), Furut et al.
patent: 2003/0059984 (2003-03-01), Sirringhaus
patent: 2003/0111663 (2003-06-01), Yagi
patent: 2004/0029382 (2004-02-01), Kawase
patent: 0273743 (1988-07-01), None
patent: WO03/056641 (2003-07-01), None
Markoff, John, HP bets inkjets will open new markets, International Herald Tribune, Oct. 10, 2004, pp. 2.
Herman Gregory
Hoffman Randy
Mardilovich Peter
Hewlett--Packard Development Company, L.P.
Malsawma Lex
LandOfFree
Semiconductor devices and methods of making does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor devices and methods of making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and methods of making will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3855336