Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-07
2006-11-07
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S412000, C438S300000, C438S303000
Reexamination Certificate
active
07132719
ABSTRACT:
As disclosed herein, a semiconductor device includes a gate and a silicon substrate having a field region and an active region. A gate dielectric layer formed on the upper surface of the active region of the silicon substrate and on a gate dielectric layer. The gate may include first and second sidewall dielectric layers sequentially formed on sidewalls of the gate, epitaxial silicon layers formed at both sides of the gate on the silicon substrate, first LDD regions formed in the silicon substrate below the second sidewall dielectric layers, second LDD regions formed at one sides of the first LDD regions below the epitaxial silicon layers, source/drain regions formed under the second LDD regions, and silicide layers formed on the gate and the source/drain regions.
REFERENCES:
patent: 5168072 (1992-12-01), Moslehi
patent: 5627097 (1997-05-01), Venkatesan et al.
patent: 5872039 (1999-02-01), Imai
patent: 6852600 (2005-02-01), Wang et al.
patent: 6872626 (2005-03-01), Cheng
patent: 6902980 (2005-06-01), Wang et al.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Tsai H. Jey
LandOfFree
Semiconductor devices and methods of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor devices and methods of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and methods of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3668635