Semiconductor devices and methods of fabricating the same

Details Semiconductor devices and methods of fabricating the same Semiconductor devices and methods of fabricating the same

2008-01-01

2008-01-01

Doan, Theresa T. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S179000, C438S283000

Reexamination Certificate

active

07314814

ABSTRACT:
Semiconductor devices and methods of fabricating the same are disclosed. A disclosed method comprises: partially forming a first gate stack; partially forming a second gate stack adjacent the first gate stack; forming a first interlayer dielectric; and completing the formation of the first and second gate stacks after the first interlayer dielectric has filled a distance between the first and second gate electrodes.

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