Semiconductor devices and methods for manufacturing the same

Details Semiconductor devices and methods for manufacturing the same Semiconductor devices and methods for manufacturing the same

2005-04-19

2005-04-19

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S306000

Reexamination Certificate

active

06881995

ABSTRACT:
Certain embodiments of the present invention relate to a semiconductor device having a DRAM including a cell capacitor formed in a DRAM region of a semiconductor substrate, and a capacitor element formed in an analog element region of the semiconductor substrate. The semiconductor device includes an interlayer dielectric layer, an embedded connection layer and a connection layer, wherein the interlayer dielectric layer is located between the semiconductor substrate and the capacitor element. The connection layer and the embedded connection layer are used to electrically connect a lower electrode of the capacitor element to another semiconductor element. The connection layer is located in a common layer of a bit line that is a component of the DRAM. The embedded connection layer is located in a connection hole formed in the interlayer dielectric layer. One end of the embedded connection layer connects to the lower electrode at a bottom surface of the lower electrode, and another end of the embedded connection layer connects to the connection layer.

REFERENCES:
patent: 5519237 (1996-05-01), Itoh et al.
patent: 6037216 (2000-03-01), Liu et al.
patent: 6104053 (2000-08-01), Nagai
patent: 6110772 (2000-08-01), Takada et al.
patent: 6200855 (2001-03-01), Lee

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