Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-07-27
2008-11-18
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S786000, C438S787000, C257SE21293
Reexamination Certificate
active
07452830
ABSTRACT:
Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.
REFERENCES:
patent: 6495476 (2002-12-01), Lee et al.
patent: 2005/0164444 (2005-07-01), Burnham et al.
Kim Tae-Hong
Shin Chul-Ho
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Ghyka Alexander G
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