Semiconductor devices and methods for forming semiconductor...

Details Semiconductor devices and methods for forming semiconductor... Semiconductor devices and methods for forming semiconductor...

2003-09-16

2004-12-14

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S305000, C438S592000, C438S595000

Reexamination Certificate

active

06830997

ABSTRACT:

FIELD OF THE DISCLOSURE
This disclosure relates generally to semiconductor devices and, more particularly, to methods for forming semiconductor devices.
BACKGROUND
As semiconductor devices have become more highly integrated, the size of chips have decreased and the width of the polysilicon gates of the chips have become narrower.
A conventional method of forming a gate of a semiconductor device will now be described with reference to
FIG. 1. A
gate polysilicon layer is formed on a semiconductor substrate
11
. Then, the gate polysilicon layer is selectively removed by an etching process using a photoresist pattern (not shown) to form a gate electrode
14
.
A low concentration ion implantation process is performed to form LDD (lightly doped drain) regions
13
. A nitride film is formed on top of the entire structure wherein the gate electrode
14
is formed. Then by etching the nitride film, the nitride film on side surfaces of the gate electrode
14
is left as sidewalls
15
of the gate electrode
14
.
Impurity ions are implanted into the LDD regions
13
on both sides of the gate electrode
14
to form source/drain regions
12
. A material for forming a silicide layer (e.g., metal) is deposited on a top surface of the entire structure and then an annealing process is performed to form a silicide layer
16
on the exposed surfaces.
In the conventional gate forming method as described above, as the size of the chip becomes smaller, the width of the polysilicon gate becomes narrower, and, as the polysilicon gate becomes narrower, the silicide resistance increases.


REFERENCES:
patent: 6017809 (2000-01-01), Inumiya et al.
patent: 6380009 (2002-04-01), Battersby
patent: 6531749 (2003-03-01), Matsuki et al.
patent: 6555450 (2003-04-01), Park et al.
patent: 6624015 (2003-09-01), Patelmo et al.
patent: 6624483 (2003-09-01), Kurata
patent: 6673712 (2004-01-01), Yen
patent: 6746900 (2004-06-01), Liu et al.

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