Semiconductor devices and method for fabricating the same

Details Semiconductor devices and method for fabricating the same Semiconductor devices and method for fabricating the same

2007-07-03

2007-07-03

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000, C438S631000, C438S633000, C438S643000, C438S645000, C438S648000, C438S652000, C438S653000, C438S656000, C438S672000, C438S678000, C438S679000, C438S685000, C438S689000, C438S690000, C438S691000, C438S692000, C257SE21641, C257SE21575, C257SE21546

Reexamination Certificate

active

11026941

ABSTRACT:
Methods for fabricating a copper interconnect of a semiconductor device are disclosed. An example method for fabricating a copper interconnect of a semiconductor device deposits a first insulating layer on a substrate having at least one predetermined structure, forms a trench and via hole through the first insulating layer by using a dual damascene process, and deposits a barrier layer along the bottom and the sidewalls of the trench and via hole. The example method forms a copper interconnect by filling the trench and via hole with copper and performing a planarization process, deposits a Ta/TaN layer over the substrate including the copper interconnect, removes some portion of the Ta/TaN layer so that the Ta/TaN layer remains only on the copper interconnect, deposits a second insulating layer over the substrate including the Ta/TaN layer, forms a via hole through the second insulating layer by removing some portion of the second insulating layer, and fills the via hole with a conductive material to complete a via.

REFERENCES:
patent: 6566250 (2003-05-01), Tu et al.
patent: 6706625 (2004-03-01), Sudijono et al.
patent: 6790778 (2004-09-01), Cheng et al.
patent: 6927113 (2005-08-01), Sahota et al.
patent: 7008871 (2006-03-01), Andricacos et al.
patent: 2002/0005583 (2002-01-01), Harada et al.
patent: 2005/0062165 (2005-03-01), Saenger et al.

Affiliated with

Also associated with

Rating

Semiconductor devices and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3760888