Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-09
2008-09-09
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S565000, C257SE29027, C257SE29066
Reexamination Certificate
active
11596063
ABSTRACT:
The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p−type body region (28). The n type semiconductor region (52) is isolated from an n+type emitter region (32) and an n−type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).
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Shekar et al.; “Trench Gate Emitter Switched Thyristors;” Proc. Of the 6thInternat. Symposium on Power Semiconductor Devices & IC's; Session 5: Thyristors 2; pp. 189-194; Davos, Switzerland; May 31-Jun. 2, 1994.
Hotta Koji
Ishiko Masayasu
Kawaji Sachiko
Saito Jun
Sugiyama Takahide
Kabushiki Kaisha Toyota Chuo Kenkyusho
Oliff & Berridg,e PLC
Pert Evan
Toyota Jidosha & Kabushiki Kaisha
Tran Tan N
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