Semiconductor devices

Details Semiconductor devices Semiconductor devices

1998-01-20

2000-07-18

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257133, 257141, H01L 2976

Patent

active

060911077

ABSTRACT:
An Insulated Gate Bipolar Transistor has a gate in the form of a trench positioned in a p region in a silicon body. The device operates in a thyristor mode having a virtual emitter which is formed during operation by the generation of an inversion layer at the bottom of the trench within the p region. The device is inherently safe and turns off rapidly as removal of a gate signal collapses the emitter. As the trench gate is situated within the p region, it can withstand high voltages when turned off as the reverse electric field is prevented from reaching the trench gate.

REFERENCES:
patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5525821 (1996-06-01), Harada et al.
patent: 5541425 (1996-07-01), Nishihara
patent: 5703384 (1997-12-01), Brunner
Lee, B. H., et al., A Trench-Gate Silicon-On-Insulator Lateral Insulated Gate Bipolar Transistor With the P+ Cathode Well, Japanese Journal of Applied Physics, vol. 34, No. 2B, Part 01, Feb. 1995, pp. 854-859.

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