Semiconductor devices

Details Semiconductor devices Semiconductor devices

1993-02-23

1999-03-09

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

H01L 2906, H01L 310328

Patent

active

058804838

ABSTRACT:
A field effect transistor having a substrate supporting an active layer comprising a Group III-V material. The active layer has a dopant concentration with a source electrode and a drain electrode disposed over and with a gate electrode disposed between the source and drain electrodes in Schottky barrier contact to the active layer. A surface layer portion of the active layer has a negatively charged surface potential disposed between the drain and gate electrodes comprised of said Group III-V material and oxygen. The surface layer portion has a thickness in the range of 25 .ANG. to 35 .ANG.. A layer of passivation material is disposed at least on the surface layer portion of the active layer.

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