Semiconductor device with wiring layers forming a capacitor

Details Semiconductor device with wiring layers forming a capacitor Semiconductor device with wiring layers forming a capacitor

2006-08-22

2006-08-22

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S309000, C257S313000, C361S306100, C361S306200, C361S306300, C361S301400

Reexamination Certificate

active

07095072

ABSTRACT:
A semiconductor device, in which four pieces of strip-shaped electrodes, whose longitudinal directions are the same, are formed in each layer of a plurality of wiring layers that are provided by a same design rule with each other, simultaneously with regular wirings. In each wiring layer, two pieces each of first electrode and second electrode are formed parallelly with each other, alternately, and remote from each other. Then, the first electrodes formed in each layer are connected to each other by a first via, the second electrodes formed in each layer are connected to each other by a second via, a first structure body formed by connecting the first electrodes and the first via to each other is connected to a ground wiring, and a second structure body formed by connecting the second electrodes and the second via to each other is connected to a power source wiring.

REFERENCES:
patent: 6690570 (2004-02-01), Hajimiri et al.
patent: 2002/0047154 (2002-04-01), Sowlati et al.
patent: 1 024 536 (2000-08-01), None
patent: 2001-358295 (2001-12-01), None
patent: 2002-124575 (2002-04-01), None
patent: 2002-222934 (2002-08-01), None
patent: 2002-324843 (2002-11-01), None
patent: 2002-353328 (2002-12-01), None
patent: 2003-530699 (2003-10-01), None
M. Armacost et al., “A High Reliability Metal Insulator Metal Capacitor for 0.18 μm Copper Technology”, IEDM2000, pp. 157-160 with Abstract.

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