Semiconductor device with wiring layer in tunnel in semiconducto

Details Semiconductor device with wiring layer in tunnel in semiconducto Semiconductor device with wiring layer in tunnel in semiconducto

1995-08-30

1997-09-09

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

257309, 257377, 257382, 257383, 257384, 257385, H01L 2940, H01L 2978

Patent

active

056660022

ABSTRACT:
A transistor element is formed on the surface of a silicon substrate. A tunnel is formed in the silicon substrate at a position right under the transistor element. A contact hole is formed to extend from the surface of the silicon substrate to the contact hole. Silicon oxide films are respectively formed on the inner surfaces of the tunnel and the contact hole. A wiring layer is buried in the tunnel and the contact hole. The wiring layer is connected to a diffusion layer of the transistor element.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 4977439 (1990-12-01), Esquivel et al.
patent: 5306942 (1994-04-01), Fujii

Affiliated with

Also associated with

Rating

Semiconductor device with wiring layer in tunnel in semiconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with wiring layer in tunnel in semiconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with wiring layer in tunnel in semiconducto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-72151