Fishing – trapping – and vermin destroying – Fishing – Artificial bait
Patent
1995-05-03
1996-11-26
Kunemund, Robert
Fishing, trapping, and vermin destroying
Fishing
Artificial bait
437 81, 437107, 437116, 437132, 117 94, 117 95, 117954, C30B 2514
Patent
active
055785212
ABSTRACT:
A silicon semiconductor substrate, on which an epitaxial layer is to be formed, is set in a reaction vessel having a heating mechanism, and a gas containing TMG and AsH.sub.3 is introduced into the reaction vessel with the substrate heated to 450.degree. C., thus forming, on the substrate, a low-temperature growth layer of amorphous or polycrystalline GaAs as a semiconductor substance having a different lattice constant from that of the substrate. Then, with the TMG removed from the introduced gas, the temperature of the semiconductor substrate is increased to 750.degree. C., to cause coagulation of atoms of the low-temperature growth layer, with a thermal treatment also being performed at this high temperature, to cause growth of island-like single crystal cores. Further, a high temperature growth process is conducted in a material gas atmosphere containing TMG, whereby a GaAs film is epitaxially grown on the semiconductor substrate surface.
REFERENCES:
patent: 4699688 (1987-10-01), Shastry
patent: 4707216 (1987-11-01), Morkoc et al.
Akiyama et al. "Growth of GaAs on Si by MOCVD," J. Crys. growth, vol. 68 (1984), pp. 21-26.
Sugimura et al., "Heteroepitaxial Growth of GaAs on Sapphire Substrates by a three-step . . . " J. Crys. Growth, vol. 77(1986), pp. 524-529.
Akiyama et al., "Growth of High Quality GaAs Layers on Si Substrates by MOCVD," J. Crys. Growth, vol 77 (1986), pp. 490-497.
Mizuguchi et al., "MOCVD GaAs Growth on Ge(100) and Si(100) Substrates," J. Crys. Growth, vol. 77 (1986), pp. 509-514.
Chand et al., ". . . Rapid Thermal Annealing on Crystalline Quality of GaAs Grown on Si . . . ", J. Vac. Sci. Technol. B5(3), May/Jun 1987, pp. 822-826.
Duncan et al., ". . . Heteroepitaxial Gallium Ansenide on Silicon," J. Appl. Phys., 59(6), 15 Mar. 1986, pp. 2161-2164.
Lee et al., ". . . Annealing Properties of Molecular-Beam Epitaxy Grown GaAs-on-Si," J. Vac. Sci. Technol. B5(3), May/Jun 1987, pp. 827-830.
Fischer et al., "Dislocation Reduction in Epitaxial GaAs on Si(100)," Appl. Phys. Lett. 48(18), 5 May 1986, pp. 1223-1225.
Technology of the Institute of Electronics and Communications Engineers of Japan, report SSD 86-99-110.
J. Appl. Phys. 57(10), p. 4578-4582, May 1985 "Characterization of Epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition": Soga et al.
Japanese Journal of Applied Physics 23, NO. 11, PP. L843-L845, Nov., 1984 "Growth of Single Domain GaAs Layer on (100)-Oriented Si. Akiyama et al. Substrate by MOCVD."
Applied Electronics Report No. 415, "GaAs Growth on Si Substrate and its Application to Devices" Akiyama et al.
The Proceedings for 33rd Symposium on Applied Physics (4P-W-7).
Vernon et al., "Heteroepitaxial (Al)GaAs Structures on GE and Si . . . ", 17th IEEE Photovoltaic Specialists Conf., Kissimmee, Fl., May 1-4, 1984, pp. 434-439.
Awano Naomi
Hara Kunihiko
Hoshino Kouichi
Inuzuka Hajime
Suzuki Takamasa
Kunemund Robert
Nippondenso Co. Ltd.
LandOfFree
Semiconductor device with vaporphase grown epitaxial does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with vaporphase grown epitaxial, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with vaporphase grown epitaxial will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1972662