Semiconductor device with trench structure and method for...

Details Semiconductor device with trench structure and method for... Semiconductor device with trench structure and method for...

2006-11-07

2006-11-07

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S413000, C438S424000, C438S425000

Reexamination Certificate

active

07132347

ABSTRACT:
A semiconductor device includes a common diffusion structure formed in each region of a substrate in which semiconductor components are formed. The diffusion structures are separated into sections by trenches to form semiconductor components. The trenches define sizes of the semiconductor components and isolate the semiconductor components from the surrounding area.

REFERENCES:
patent: 5306940 (1994-04-01), Yamazaki
patent: 5994200 (1999-11-01), Kim
patent: 6472254 (2002-10-01), Cantarini et al.
patent: 6653702 (2003-11-01), Ishio et al.
patent: 6791156 (2004-09-01), Itou
patent: 2001/0032990 (2001-10-01), Koyama et al.

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