Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-07
2011-06-07
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S367000, C257S369000, C257SE21695, C257SE21616
Reexamination Certificate
active
07956423
ABSTRACT:
A method of a semiconductor device, which includes an insulated-gate FET and an electronic element, includes three steps. The first step is the step of forming a trench gate of the insulated-gate FET in a first region of a semiconductor base and a trench element-isolation layer in a second region of the semiconductor base, simultaneously. The second step is the step of forming a first diffusion layer of the insulated-gate FET on a side of the trench gate and a second diffusion layer of the electronic element in a region surrounded by the trench element-isolation layer, simultaneously. The third step is the step of forming a third diffusion layer of the insulated-gate FET in the first diffusion layer and a fourth diffusion layer of the electronic element in the second diffusion layer, simultaneously.
REFERENCES:
patent: 5821580 (1998-10-01), Kuwahara
patent: 6323518 (2001-11-01), Sakamoto et al.
patent: 2002/0014675 (2002-02-01), Matsumoto et al.
patent: 6-326320 (1994-11-01), None
patent: 2002-48651 (2002-02-01), None
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Arai Takao
Shirai, legal representative Sachiko
Diallo Mamadou
McGinn IP Law Group PLLC
Renesas Electronics Corporation
Richards N Drew
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