Semiconductor device with trench field plate including first...

Details Semiconductor device with trench field plate including first... Semiconductor device with trench field plate including first...

2008-11-10

2011-10-25

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S272000

Reexamination Certificate

active

08044459

ABSTRACT:
In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.

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“A New Generation of High Voltage MOSFETs Breaks the Limit Line of Silicon”, Deboy G., et al., IEEE, 2008 (1 pg.).

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