Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-21
2006-02-21
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S648000
Reexamination Certificate
active
07001839
ABSTRACT:
In a semiconductor device having a wire structure, the thickness of a first insulation film substantially corresponds to the depth of a contact hole. A surface of a second insulation film serves as a bottom face of a wire groove. Regarding the contact hole, only a side wall portion intersecting a direction of the wire groove has a substantial taper angle. This configuration can be attained under conditions where an etching selectivity of the first insulation film to the second insulation film is set to be slightly lower and a portion of the second insulation film where an opening edge of an opening portion is exposed is slightly etched during etching process of the wire groove. With a semiconductor device having this structure, a conductive material embedding characteristic can be enhanced, while preventing possibility of short-circuit even when an interval between wires is reduced.
REFERENCES:
patent: 4933303 (1990-06-01), Mo
patent: 5629237 (1997-05-01), Wang et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5668413 (1997-09-01), Nanjo
patent: 5686357 (1997-11-01), Howard
patent: 5686760 (1997-11-01), Miyakawa
patent: 5976972 (1999-11-01), Inohara et al.
patent: 6025259 (2000-02-01), Yu et al.
patent: 6060385 (2000-05-01), Givens
patent: 6159862 (2000-12-01), Yamada et al.
patent: 6187671 (2001-02-01), Irinoda
patent: 6271117 (2001-08-01), Cherng
patent: 06-037037 (1994-02-01), None
patent: 07-283219 (1995-10-01), None
patent: 07-321204 (1995-12-01), None
patent: 08-017918 (1996-01-01), None
patent: 08-107087 (1996-04-01), None
patent: 08-288390 (1996-11-01), None
patent: 10-177992 (1998-06-01), None
Banner & Witcoff , Ltd.
Harrison Monica D.
Pert Evan
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