Semiconductor device with tantalum and ruthenium

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257532, 257628, 257753, 257761, 438650, 438685, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060910992

ABSTRACT:
Disclosed is a semiconductor device, comprising a semiconductor substrate, a cell transistor formed in the semiconductor substrate, an interlayer dielectric film in which is formed a contact hole communicating with a part of the cell transistor, a contact plug buried in the contact hole formed in the interlayer dielectric film, a capacitor lower electrode formed of a ruthenium/tantalum laminate film consisting of a tantalum film and a ruthenium film formed on the tantalum film, the lower electrode being formed on interlayer dielectric film and connected to the contact plug, a capacitor dielectric film formed on the ruthenium film included in the capacitor lower electrode and consisting of a metal oxide, and a capacitor upper electrode formed on the capacitor dielectric film, the ruthenium film exhibiting (00n) dominant orientation, where n denotes a positive integer.

REFERENCES:
patent: 5293510 (1994-03-01), Takenaka
patent: 5466629 (1995-11-01), Mihara et al.
patent: 5486713 (1996-01-01), Koyama
patent: 5717236 (1998-02-01), Shinkawata
patent: 5801105 (1998-09-01), Yano et al.

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