Semiconductor device with T-shaped gate electrode and hollow...

Details Semiconductor device with T-shaped gate electrode and hollow... Semiconductor device with T-shaped gate electrode and hollow...

2007-11-21

2009-11-24

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE21205, C257SE21624, C257SE21638

Reexamination Certificate

active

07622767

ABSTRACT:
In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective insulating film spreads in an umbrella shape from above the T-shaped gate electrode. A hollow region is formed between the two SiN films. The SiN films are coated with a SiN third protective insulating film with the hollow region remaining.

REFERENCES:
patent: 5717232 (1998-02-01), Inoue et al.
patent: 5869374 (1999-02-01), Wu
patent: 6740535 (2004-05-01), Singh et al.
patent: 6891235 (2005-05-01), Furukawa et al.
patent: 6972440 (2005-12-01), Singh et al.
patent: 7282423 (2007-10-01), Furukawa et al.
patent: 7387955 (2008-06-01), Ahn et al.
patent: 7432563 (2008-10-01), Behammer
patent: 2002/0083406 (2002-06-01), Tsai et al.
patent: 2006/0118823 (2006-06-01), Parikh et al.
patent: 2007/0132021 (2007-06-01), Kunii et al.
patent: 2008/0087916 (2008-04-01), Amasuga et al.
patent: 2008/0096354 (2008-04-01), Deleonibus
patent: 05335343 (1993-12-01), None
patent: 11-274175 (1999-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with T-shaped gate electrode and hollow... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with T-shaped gate electrode and hollow..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with T-shaped gate electrode and hollow... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4124309