Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-08-29
2009-12-29
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S347000, C257SE29135
Reexamination Certificate
active
07638838
ABSTRACT:
The semiconductor device includes an active region, a stepped recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The stepped recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the stepped recess channel region. The gate structure is disposed over the stepped recess channel region of the gate region.
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Chung Sung Woong
Lee Sang Don
Hynix / Semiconductor Inc.
Smoot Stephen W
Townsend and Townsend / and Crew LLP
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