Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Patent
1996-04-26
1997-04-01
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
257723, 257724, H01L 23552
Patent
active
056169523
ABSTRACT:
It is the object of the invention to expand a band width of an amplifier by effectively decreasing wiring capacitances of the amplifier formed in a semiconductor chip. The semiconductor chip is implemented in a package, and an output signal of the amplifier (not shown) formed in the semiconductor chip is supplied to the input terminal of an external buffer amplifier. In various signal paths which connect the output amplifier to the buffer amplifier, a signal wire, which connects the output terminal of the output amplifier to an output pad formed in the circumference of the chip, is provided with a shield wire thereunder. The shield wire is supplied with the output signal of the buffer amplifier. Since the phase and the amplitude of the voltage supplied by the buffer amplifier is nearly the same as those of the signal wire, the wiring capacitance between both wires is equivalently zero.
REFERENCES:
patent: 4716466 (1987-12-01), Miida et al.
patent: 5479044 (1995-12-01), Narahara et al.
Peter Centen, "CCD On-Chip Amplifiers: Noise Performance versus MOS Transistor Dimensions", IEEE Transactions on Electron Devices,vol. 38, No. 5, May 1991, pp. 1206-1216.
Nakano Takashi
Taniji Yukio
Clark S. V.
NEC Corporation
Saadat Mahshid D.
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