Semiconductor device with staggered electrodes and increased...

Details Semiconductor device with staggered electrodes and increased... Semiconductor device with staggered electrodes and increased...

2006-05-23

2006-05-23

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S696000, C257S698000, C257S208000, C257S203000, C257S784000, C257S673000, C257S674000

Reexamination Certificate

active

07049706

ABSTRACT:
A semiconductor device having electrodes formed along a peripheral part thereof in a staggered arrangement of lines including inside-line, central-line and outside-line electrodes. The inside-line electrodes are octagonal or hexagonal shaped with hypotenuses on the central-line electrode and the pellet sides thereof. The central-line electrodes are octagonal or correspondingly hexagonal shaped with hypotenuses on the inside-line and outside-line electrode sides thereof. The maximum width of outside-line electrode wires between the hypotenuses of adjacent inside-line and central-line electrodes depends on the distance between centers of the inside-line and central-line electrodes, minimum lengths of the inside-line and central-line electrodes and electrode protective film, and the necessary minimum conductor interval between the central-line and inside-line electrodes. The position and form of the central-line and inside-line electrodes are determinable based on the given relationship and the necessary value of current.

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