Semiconductor device with spare memory cells

Static information storage and retrieval – Read/write circuit – Bad bit

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371 10, G11C 700

Patent

active

045660816

ABSTRACT:
A semiconductor memory device includes a plurality of bit memory sections, a plurality of column select circuits for selecting columns of each of the bit memory sections, and a spare memory section containing a column of spare memory cells. The first switching circuits are coupled with the column select circuits and a second switching circuit is coupled with the spare memory section. A control circuit responds to a specific address by turning off the selected one of the first switching circuits and turning on the second switching circuit.

REFERENCES:
patent: 4422161 (1983-12-01), Kressel et al.
Vernon G. McKenny, "A 5 V 64K EPROM Utilizing Redundant Circuitry", ISSCC Digest of Technical Papers, pp. 146-147, Feb. 1980.

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