Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-16
2007-01-16
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S379000
Reexamination Certificate
active
10835122
ABSTRACT:
A semiconductor device includes a semiconductor substrate, an insulating film projected on a surface of the semiconductor substrate, a semiconductor film provided on a side surface of the insulating film, and MIS transistor formed in the semiconductor film, the MIS transistor having source, gate and drain region. The semiconductor device further includes a gate electrode provided on the gate region of the MIS transistor, the length of the gate electrode being larger than the thickness of the semiconductor film.
REFERENCES:
patent: 5225701 (1993-07-01), Shimizu et al.
patent: 5554870 (1996-09-01), Fitch et al.
patent: 6762448 (2004-07-01), Lin et al.
patent: 4-250667 (1992-09-01), None
patent: 5-283700 (1993-10-01), None
patent: 11-330462 (1999-11-01), None
E.J. Nowak et al., “A Functional FinFET-DGCMOS SRAM Cell,” International Electron Device Meeting, 2002, pp. 411-414.
Ishimaru Kazunari
Kawasaki Hirohisa
Frommer & Lawrence & Haug LLP
Kabushiki Kaisha Toshiba
Menz Douglas M.
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