Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-09
2007-10-09
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S684000, C438S685000, C257S412000, C257S413000, C257SE29161
Reexamination Certificate
active
10915381
ABSTRACT:
Provided is a semiconductor device having a suicide thin film with thermal stability and a method of manufacturing the same. The semiconductor device includes a silicon substrate containing Si a gate oxide film formed on the silicon substrate, a gate electrode containing Si formed on the gate oxide film, a spacer formed on side walls of the gate oxide film and the gate electrode, a LDD region formed in the silicon substrate under the spacer, a source/drain region formed in the silicon substrate, a NiSi thin film formed on the source/drain region and the gate electrode by reacting a Ni film with the source/drain region and the gate electrode; and a nitride film formed on the NiSi thin film formed by surface treating the nickel film using Ar plasma and reacting the Ni film with nitrogen. The, a semiconductor device having the NiSi thin film has a low sheet resistance and high thermal stability can be obtained.
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(All of the above documents were cited in the specification of U.S Appl. No. 10/915,381, filed on Aug. 11, 2004).
Buchanan & Ingersoll & Rooney PC
Budd Paul
Jackson Jerome
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