Semiconductor device with sidewall wiring

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Reexamination Certificate

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Details

C257S686000

Reexamination Certificate

active

11206146

ABSTRACT:
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

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European Office Action mailed Apr. 10, 2006, directed to counterpart EP Application No. 03010938.3.
European Office Action dated Aug. 10, 2005, directed to counterpart foreign application.

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