Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2009-12-01
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S424000
Reexamination Certificate
active
07626234
ABSTRACT:
A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.
REFERENCES:
patent: 6333274 (2001-12-01), Akatsu et al.
patent: 6333547 (2001-12-01), Tanaka et al.
patent: 6436790 (2002-08-01), Ito
patent: 6531377 (2003-03-01), Knorr et al.
patent: 6790723 (2004-09-01), Tanaka et al.
patent: 6798038 (2004-09-01), Sato et al.
patent: 6828213 (2004-12-01), Mehrad et al.
patent: 2003/0199151 (2003-10-01), Ho et al.
patent: 11-297811 (1999-10-01), None
patent: 11-297812 (1999-10-01), None
patent: 2001168092 (2001-06-01), None
patent: 2001319968 (2001-11-01), None
patent: 2002208629 (2002-07-01), None
The State Intellectual Property Office of the People's Republic of China dated Apr. 21, 2006 issued corresponding to Japanese Patent Application.
Japanese Office Action dated Sep. 29, 2009 issued in corresponding Japanese patent Application No. 2004060210 (w/Partial Translation).
Inoue Kengo
Ota Hiroyuki
Fujitsu Microelectronics Limited
Vu David
Westerman Hattori Daniels & Adrian LLP
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