Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-02
2007-10-02
Geyer, Scott B. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21179
Reexamination Certificate
active
11060542
ABSTRACT:
A semiconductor device includes a semiconductor substrate including a first upper surface, a first insulating film including an upper portion including a first side wall having a first upper end and a second upper surface having a second upper end, a second insulating film formed on the first upper surface of the substrate, a floating gate electrode including a third upper surface, a second side wall and a lower surface, a third insulating film, and a control gate electrode. A height of the second upper end is lower than a height of the third upper surface and higher than a height of the first upper end relative to the first upper surface. The first upper end is located at a position higher than the lower surface of the floating gate electrode. The entire second side wall is aligned with the first side wall of the first insulating film.
REFERENCES:
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6399985 (2002-06-01), Horita et al.
patent: 6548866 (2003-04-01), Noguchi
patent: 2002/0027245 (2002-03-01), Noguchi
patent: 2002-33476 (2002-01-01), None
patent: 2002-124563 (2002-04-01), None
Iguchi Tadashi
Kamo Ryuichi
Watanobe Hisashi
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