Semiconductor device with sense structure

Details Semiconductor device with sense structure Semiconductor device with sense structure

2003-09-12

2008-10-21

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S355000, C327S434000

Reexamination Certificate

active

07439582

ABSTRACT:
A power semiconductor device is described with a plurality of cells divided into power cells (14) and sense cells (16). A plurality of groups (30, 32) of sense cells (16) are provided. The device allows for compensation of effects caused at the edges of the groups of sense cells (16).

REFERENCES:
patent: 5801573 (1998-09-01), Kelly et al.
patent: 6433386 (2002-08-01), Yun et al.

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