Semiconductor device with sense amplifier for memory cells

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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Details

C365S207000

Reexamination Certificate

active

11076066

ABSTRACT:
A configuration is provided with: memory cell arrays, sense amplifiers, bit lines that connect the memory cells and sense amplifiers, and transfer gates that are inserted on the bit lines for ON/OFF control of the connections of the memory cells and the sense amplifiers; wherein the sense-amplifier-interior bit lines, which are the sense-amplifier sides of the bit lines from the transfer gates, are arranged at positions interposed between exterior bit lines, which are the memory-cell side of the bit lines from the transfer gates.

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patent: 5590080 (1996-12-01), Hasagawa et al.
patent: 5732010 (1998-03-01), Takashima et al.
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patent: 2000-276878 (2000-10-01), None
patent: 2001-102549 (2001-04-01), None
patent: 3225507 (2001-08-01), None
patent: 2001-273764 (2001-10-01), None
patent: 3302796 (2002-04-01), None

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