Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-21
2011-06-21
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S069000, C257S204000, C257SE21400, C257SE21550, C257SE21580, C257SE21231, C257SE21248, C257SE21314, C257SE21006
Reexamination Certificate
active
07964900
ABSTRACT:
A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.
REFERENCES:
patent: 4244097 (1981-01-01), Cleary
patent: 4474623 (1984-10-01), Adlerstein
patent: 5515471 (1996-05-01), Yamamoto et al.
patent: 5914499 (1999-06-01), Hermansson et al.
patent: 6046109 (2000-04-01), Liao et al.
patent: 7071478 (2006-07-01), Lin et al.
patent: 7622358 (2009-11-01), Lin et al.
patent: 2002/0077485 (2002-06-01), Avrutov
patent: 2004/0082138 (2004-04-01), Wen-Chin et al.
patent: 2005/0077485 (2005-04-01), Wang et al.
patent: 2005/0133477 (2005-06-01), Esseian
patent: 2005/0164476 (2005-07-01), Schulze et al.
patent: 2006/0172547 (2006-08-01), Furukawa et al.
patent: 447000 (2001-07-01), None
Tang et al., “The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips”, 2003 IEEE, IEDM, pp. 673-676.
Cheng Hsu Chen
Lee Chuan-Ying
Lin Wen-Chin
Tang Denny
Duane Morris LLP
Nhu David
Taiwan Semiconductor Manufacturing Co. Ltd
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