Semiconductor device with self-aligned insulator

Details Semiconductor device with self-aligned insulator Semiconductor device with self-aligned insulator

1997-08-08

1999-09-21

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, H01L 2976, H01L 2701

Patent

active

059557672

ABSTRACT:
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.

REFERENCES:
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4683637 (1987-08-01), Varker et al.
patent: 4700454 (1987-10-01), Baerg et al.
patent: 4706378 (1987-11-01), Havemann
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 5134088 (1992-07-01), Zetterlund
patent: 5346841 (1994-09-01), Yajima
patent: 5399507 (1995-03-01), Sun
patent: 5439841 (1995-08-01), Alter
patent: 5567629 (1996-10-01), Kubo
IBM Technical Disclosure Bulletin, "Quasi-Semiconductor-on-Insulator CMOS Structure," vol. 31, No. 8, Jan. 1989, pp. 114-114.

Affiliated with

Also associated with

Rating

Semiconductor device with self-aligned insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with self-aligned insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with self-aligned insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-82785