Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-12-05
2006-12-05
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000, C438S508000, C257S194000, C257SE21403, C257SE21407
Reexamination Certificate
active
07144765
ABSTRACT:
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate310, a GaAs buffer layer321that is formed on the semi-insulating GaAs substrate310, AlGaAs buffer layer322, a channel layer323, a spacer layer324, a carrier supply layer325, a spacer layer326, a Schottky layer327composed of an undoped In0.48Ga0.52P material, and an n+-type GaAs cap layer328.A gate electrode330is formed on the Schottky layer327, and is composed of LaB6and has a Schottky contact with the Schottky layer327, and ohmic electrodes340are formed on the n+-type GaAs cap layer328.
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Anda Yoshiharu
Tamura Akiyoshi
Fourson George R.
Pham Thanh V.
Wenderoth , Lind & Ponack, L.L.P.
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